Low temperature aluminum nitride thin films for sensory applications
作者： E. Yarar , V. Hrkac , C. Zamponi , A. Piorra , L. Kienle
DOI: 10.1063/1.4959895
关键词:
摘要: A low-temperature sputter deposition process for the synthesis of aluminum nitride (AlN) thin films that is attractive applications with a limited temperature budget presented. Influence reactive gas concentration, plasma treatment nucleation surface and film thickness on microstructural, piezoelectric dielectric properties AlN investigated. An improved crystal quality respect to increased was observed; where full width at half maximum (FWHM) decreased from 2.88 ± 0.16° down 1.25 0.07° effective longitudinal coefficient (d33,f) 2.30 0.32 pm/V up 5.57 0.34 thicknesses in range 30 nm 2 μm. Dielectric loss angle (tan δ) 0.626% 0.005% 0.025% 0.011% same range. The average relative permittivity (er) calculated as 10.4 0.05. almost constant transversal (|e31,f|) 1.39 0.01 C/m2 measured samples 0.5 μm Transmission electron microscopy (TEM) investigations performed (100 nm) thick (1.6 μm) revealed an (002) oriented growth starting directly AlN-Pt interface independent exhibit comparable state-of-the-art sputtered much higher substrate temperatures.
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