Behaviour of amorphous silicon carbide in Au/a-SiC/Si heterostructures prepared by PECVD technology using two different RF modes
作者： Milan Perný , Miroslav Mikolášek , Vladimír Šály , Michal Ružinský , Vladimír Ďurman
DOI: 10.1016/J.APSUSC.2012.09.086
关键词:
摘要: Abstract Amorphous silicon carbide a-SiC (or more accurate a-Si 1− x C ) thin films were prepared within Au/a-Si /c-Si(p)/Al structures by PECVD deposition technique. Thin on (1 0 0) substrates deposited using two different RF modes, i.e. placing the either electrically powered or grounded electrode. FTIR spectroscopy method was used for characterization of chemical bond states in structure. Morphology surface analysed AFM. – V measurements heterostructures performed to evaluate charge transport properties structures. Temperature dependences forward (FW) current–voltage ( I characteristics are shown and this paper. Parameters as saturation current activation energies calculated from biased curves.
sci-hub.se 参考文章(21)
P. Louro, M. Vieira, M. A., M. Fernandes, J. Cost, Use of a-SiC:H Photodiodes in Optical Communications Applications InTech. ,(2011) , 10.5772/14048
Hiroyuki Fujiwara, Michio Kondo, Effects of a‐Si:H layer thicknesses on the performance of a‐Si:H∕c‐Si heterojunction solar cells Journal of Applied Physics. ,vol. 101, pp. 054516- ,(2007) , 10.1063/1.2559975
Shunsuke Ogawa, Masaaki Okabe, Yuusuke Ikeda, Takashi Itoh, Norimitsu Yoshida, Shuichi Nonomura, Applications of microcrystalline hydrogenated cubic silicon carbide for amorphous silicon thin film solar cells Thin Solid Films. ,vol. 516, pp. 740- 742 ,(2008) , 10.1016/J.TSF.2007.06.047
J. Bullot, M. P. Schmidt, Physics of Amorphous Silicon–Carbon Alloys Physica Status Solidi B-basic Solid State Physics. ,vol. 143, pp. 345- 418 ,(1987) , 10.1002/PSSB.2221430202
Alka Kumbhar, Samadhan B Patil, Sanjay Kumar, R Lal, R.O Dusane, Photoluminescent, wide-bandgap a-SiC:H alloy films deposited by Cat-CVD using acetylene Thin Solid Films. ,vol. 395, pp. 244- 248 ,(2001) , 10.1016/S0040-6090(01)01263-9
L. F. Marsal, J. Pallarès, X. Correig, J. Calderer, R. Alcubilla, Electrical characterization of n‐amorphous/p‐crystalline silicon heterojunctions Journal of Applied Physics. ,vol. 79, pp. 8493- 8497 ,(1996) , 10.1063/1.362526
M. Vetter, C. Voz, R. Ferre, I. Martín, A. Orpella, J. Puigdollers, J. Andreu, R. Alcubilla, Electronic properties of intrinsic and doped amorphous silicon carbide films Thin Solid Films. ,vol. 511, pp. 290- 294 ,(2006) , 10.1016/J.TSF.2005.11.108
Orhan Özdemir, Kutsal Bozkurt, Kubilay Kutlu, Investigation of Electrical Transport in PECVD Grown a-SiCx:H Thin Film Materials Sciences and Applications. ,vol. 02, pp. 993- 999 ,(2011) , 10.4236/MSA.2011.28134
Y. Tawada, H. Okamoto, Y. Hamakawa, a‐SiC:H/a‐Si:H heterojunction solar cell having more than 7.1% conversion efficiency Applied Physics Letters. ,vol. 39, pp. 237- 239 ,(1981) , 10.1063/1.92692
M.N.P. Carreño, A.T. Lopes, Self-sustained bridges of a-SiC:H films obtained by PECVD at low temperatures for MEMS applications Journal of Non-crystalline Solids. pp. 490- 495 ,(2004) , 10.1016/J.JNONCRYSOL.2004.03.026