RIR MAPLE procedure for deposition of carbon rich Si/C/H films

摘要: Abstract We applied the resonant infrared matrix assisted pulsed laser evaporation (RIR MAPLE) technique to demonstrate a new approach controlled deposition of carbon rich amorphous Si/C/H film. In absence radicals and accelerated species commonly generated in PECVD sputtering setups, RIR MAPLE method does not decompose precursor molecules. Moreover, unlike standard procedure, which solvent molecules absorb energy from excimer or near lasers, we TEA CO2 excite dendrimer frozen target. this manner achieved just cross-linking starting on substrates The film was analyzed by Fourier Transformed Infrared (FTIR), UV/VIS, Raman X-ray Photoelectron (XPS) spectroscopy Atomic Force Microscopy (AFM) technique. According analyses retained elemental composition free graphitic (sp2) clusters. course reaction only peripheral allyl groups containing C=C bonds were opened achieve cross-linking. Whereas annealing 300 °C necessary for elimination =C–H1, 2 films prepared at 200 °C, those vanished completely substrate temperature 255 °C. posseses smooth surface with root mean square (RMS) parameter up 10 nm within scanned distance 2.5 μm.