Methods and apparatus for controlling ion energy and plasma density in a plasma processing system

摘要: A plasma processing system includes a reactor, first power circuit, second circuit and feedback circuit. The supplies radio frequency (rf) energy to the reactor that is suitable for creating direct current bias on workpiece positioned within chamber. rf striking coupled control by detecting at least one parameter associated with providing signal adjusts so level of ionized particles chamber substantially controlled via created energy. can also be provided density controlled.