Optical semiconductor element and method of manufacturing the same

作者: Tokuharu Kimura , Kazumasa Takabayashi , Tsuyoshi Yamamoto

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摘要: A quantum dot laser includes a GaAs substrate, active layer which has barrier of and dots, waveguide core is joined to the layer, lower cladding an upper sandwich layer. The extends from front end thickness gradually decreases in direction depart refractive index first higher than second With this structure, expansion optical mode diameter that more necessary inhibited prevent leakage light, thereby obtaining sufficient output.

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