Mode-locked semiconductor lasers with quantum-confined active region
作者： Petros M. Varangis , John L. Zilko , Allen L. Gray , Hua Huang , Lei Zhang
DOI:
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摘要: A mode-locked integrated semiconductor laser has a gain section and an absorption that are based on quantum-confined active regions. The optical mode(s) in each can be modeled as occupying certain cross-sectional area, referred to the mode cross-section. cross-section absorber is larger area than section, thus reducing power density relative section. This, turn, delays saturation of until higher powers, increasing peak output laser.
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