Graphene/GaN diodes for ultraviolet and visible photodetectors
作者： Fang Lin , Shao-Wen Chen , Jie Meng , Geoffrey Tse , Xue-Wen Fu
DOI: 10.1063/1.4893609
关键词:
摘要: The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) green lights. physical mechanisms photoelectric response with different light wavelengths different. For UV illumination, photo-generated carriers lower barrier increase photocurrent. as photon energy is smaller than bandgap GaN, hot electrons excited in graphene via internal photoemission responsible response. Using a transparent electrode, show ∼mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.
scitation.org
harvard.edu
osti.gov
aip.org
researchgate.net 
core.ac.uk 
sci-hub.se 参考文章(30)
F. Lin, B. Shen, S. Huang, F. J. Xu, L. Lu, J. Song, F. H. Mei, N. Ma, Z. X. Qin, G. Y. Zhang, Temperature dependence of the specific resistance in Ti/Al/Ni/Au Ohmic contacts on (NH4)2Sx treated n-type GaN Journal of Applied Physics. ,vol. 105, pp. 093702- ,(2009) , 10.1063/1.3120962
Hongtao Liu, Yunqi Liu, Daoben Zhu, Chemical doping of graphene Journal of Materials Chemistry. ,vol. 21, pp. 3335- 3345 ,(2011) , 10.1039/C0JM02922J
Dong Sun, Grant Aivazian, Aaron M Jones, Jason S Ross, Wang Yao, David Cobden, Xiaodong Xu, None, Ultrafast hot-carrier-dominated photocurrent in graphene Nature Nanotechnology. ,vol. 7, pp. 114- 118 ,(2012) , 10.1038/NNANO.2011.243
Thomas Mueller, Fengnian Xia, Phaedon Avouris, Graphene photodetectors for high-speed optical communications Nature Photonics. ,vol. 4, pp. 297- 301 ,(2010) , 10.1038/NPHOTON.2010.40
A C Schmitz, A T Ping, M Asif Khan, Q Chen, J W Yang, I Adesida, Schottky barrier properties of various metals on n-type GaN Semiconductor Science and Technology. ,vol. 11, pp. 1464- 1467 ,(1996) , 10.1088/0268-1242/11/10/002
T.J. Echtermeyer, L. Britnell, P.K. Jasnos, A. Lombardo, R.V. Gorbachev, A.N. Grigorenko, A.K. Geim, A.C. Ferrari, K.S. Novoselov, Strong plasmonic enhancement of photovoltage in graphene Nature Communications. ,vol. 2, pp. 458- ,(2011) , 10.1038/NCOMMS1464
Eduardo J. H. Lee, Kannan Balasubramanian, Ralf Thomas Weitz, Marko Burghard, Klaus Kern, Contact and edge effects in graphene devices Nature Nanotechnology. ,vol. 3, pp. 486- 490 ,(2008) , 10.1038/NNANO.2008.172
Hye-Young Kim, Kangho Lee, Niall McEvoy, Chanyoung Yim, Georg S. Duesberg, Chemically Modulated Graphene Diodes Nano Letters. ,vol. 13, pp. 2182- 2188 ,(2013) , 10.1021/NL400674K
L. Rigutti, M. Tchernycheva, A. De Luna Bugallo, G. Jacopin, F. H. Julien, L. F. Zagonel, K. March, O. Stephan, M. Kociak, R. Songmuang, Ultraviolet Photodetector Based on GaN/AlN Quantum Disks in a Single Nanowire Nano Letters. ,vol. 10, pp. 2939- 2943 ,(2010) , 10.1021/NL1010977
Chang Oh Kim, Sung Kim, Dong Hee Shin, Soo Seok Kang, Jong Min Kim, Chan Wook Jang, Soong Sin Joo, Jae Sung Lee, Ju Hwan Kim, Suk-Ho Choi, Euyheon Hwang, High photoresponsivity in an all-graphene p-n vertical junction photodetector Nature Communications. ,vol. 5, pp. 3249- ,(2014) , 10.1038/NCOMMS4249