作者: Ming-Jun Sun , Xinrui Cao , Zexing Cao
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摘要: A wide-bandgap SiC4 semiconductor with low density and high elasticity has been designed characterized by ab initio molecular dynamics simulations first-principles calculations. The through-space conjugation among the d orbitals of Si π* ethynyl moieties can remarkably enhance photoconductivity. This new-type superlight superflexible is predicted to have unique electronic, optical, mechanical properties, it a quite promising material for high-performance UV optoelectronic devices suitable various practical demands in complex environment.