Absorption spectroscopy on room temperature excitonic transitions in strained layer InGaAs/InGaAlAs multiquantum‐well structures

摘要: The physical properties (transition energy, oscillator strength, linewidth, binding and reduced effective mass) of room temperature excitons in compressively strained InGaAs/InGaAlAs multiquantum‐well (MQW) structures as a function the well width have been investigated for first time by both absorption measurements photomodulated transmittance measurements. Photomodulated spectroscopy has successfully applied to clearly reveal critical transition points. Measured energies are good agreement with model which includes heavy hole light splitting due strain. For widths 2.5–7.5 nm, strengths smaller layer MQWs than lattice‐matched 35%–45%. This is larger exciton radius resulting from in‐plane masses (0.031–0.038m0), 65% those MQWs.