Extremely wide modulation bandwidth in a low threshold current strained quantum well laser
作者： I. Suemune , L. A. Coldren , M. Yamanishi , Y. Kan
DOI: 10.1063/1.99984
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摘要: Lasing characteristics of strained quantum well (QW) structures such as InGaAs/AlGaAs on GaAs and InGaAs/InAlAs InP were analyzed by taking into account the band mixing effect in valence band. A relaxation oscillation frequency fr, which gives a measure upper modulation limit, was found increased three times 50 In0.9Ga0.1As/In0.52Al0.48As QW structure compared with that GaAs/Al0.4Ga0.6As for undoped case. One main factors this improved bandwidth is attributed to reduced subband nonparabolicity valence‐band density state structure. The corresponding lasing threshold current one order magnitude smaller than GaAs/AlGaAs With p doping fr value increases, 3 dB cutoff about 90 GHz will be expected an acceptor concentration 5×1018 cm−3 QW.
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