Zeeman levels of shallow acceptors in cubic semiconductors
作者： W O G Schmitt , E Bangert , G Landwehr
DOI: 10.1088/0953-8984/3/35/010
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摘要: A detailed theory for the Zeeman splitting of shallow acceptors in cubic semiconductors is presented, allowing contributions from band structure, magnetic field orientations B//(001), (111), (110) and large fields B. Practically exact solutions are achieved by taking higher angular momenta into account. The authors calculate ground state first excited odd-parity states. By also determining probability transitions between these states they succeed a reasonable interpretation experimental results Ge GaAs. tabulate g-values wide range Luttinger parameters. description terms linear dependence only proves to be accurate limited strengths.
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