Plasma exposure inducing crystallization of indium oxide film with improved electrical and mechanical properties at room temperature
作者： Lei Yang , Jiaqi Zhu , Jie Bai , Yuankun Zhu , Bing Dai
DOI: 10.1007/S10853-014-8314-0
关键词:
摘要: A novel plasma exposure technique has been introduced into conventional magnetron sputtering process to enhance the crystallization of indium oxide (In2O3) films at room temperature. The effect with different pulsed DC voltages on electrical and mechanical properties In2O3 was investigated. It is observed that film can be significantly enhanced when voltage (|V p|) higher than |−500 V| p| > |−500 V|). By applying process, prepared temperature thickness 135 nm shows low resistivity 4.11 × 10−4 Ω cm, mobility 42.1 cm2/Vs, transmittance over 80 % in visible range. Compared without show better remarkably nanohardness. a useful candidate for enhancing
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