Room temperature deposition of crystalline indium tin oxide films by cesium-assisted magnetron sputtering
作者： Deuk Yeon Lee , Hong-Koo Baik
DOI: 10.1016/J.APSUSC.2008.03.066
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摘要: Abstract Indium tin oxide (ITO) films were deposited on a Si (1 0 0) substrate at room temperature by cesium-assisted magnetron sputtering. Including plasma characteristics, the structural, electrical, and optical properties of investigated as function cesium partial vapor pressure controlled reservoir temperature. We calculated coverage target surface showing maximum formation efficiency negative ions means theoretical model. Cesium addition promotes ions, which plays important role in enhancing crystallinity ITO films. In particular, density was linearly increased with concentrations. The resultant decrease specific resistivity increase transmittance (82% visible region) optimum concentration (4.24 × 10 −4 Ω cm 80 °C temperature) may be due to enhanced Excess incorporation into resulted amorphization its microstructure leading degradation crystallinity. discuss effects based growth mechanism density.
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