Effect of cesium assistance on the electrical and structural properties of indium tin oxide films grown by magnetron sputtering
作者： Jaewon Song , Cheol Seong Hwang , Sung Jin Park , Neung Ku Yoon
DOI: 10.1116/1.3136854
关键词:
摘要: Indium tin oxide (ITO) thin films were deposited by cesium (Cs)-assisted dc magnetron sputtering in an attempt to achieve a high performance at low temperatures. The on SiO2∕Si wafer and glass (Eagle 2000) substrates substrate temperature of 100°C with Cs vapor flow during the deposition process. ITO presence showed better crystallinity than control grown under normal Ar∕O2 plasma conditions. resistivity assistance was lower that films. lowest 6.2×10−4Ωcm, which is ∼20% sample, obtained without any postdeposition thermal annealing. surface roughness increased slightly when added. optical transmittance >80% wavelengths ranging from 380to700nm.
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