Novel Computing Method for Short Programming Time and Low Energy Consumption in HfO 2 Based RRAM Arrays
作者： Gilbert Sassine , Carlo Cagli , Jean-Francois Nodin , Gabriel Molas , Etienne Nowak
DOI: 10.1109/JEDS.2018.2830999
关键词:
摘要: This paper proposes a novel technique for reducing programming time and energy consumption in resistive random access memory (RRAM) arrays based on ramped voltage stress (RVS). RVS method is correlated to conventional constant (CVS) using an analytical model validating as reliable switching characterization RRAM arrays. optimized reduce providing quantitative qualitative link between tails improvement Switching distribution much more controlled: half decade comparison with ~3 decades CVS method. Energy reduced by 4 orders of magnitude at $+5\sigma $ quantiles our proposed compared CVS.
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