Nanoscale imaging of grain orientations and ferroelectric domains in (Bi1−xLax)4Ti3O12 films for ferroelectric memories
作者： B. Yang , N. J. Park , B. I. Seo , Y. H. Oh , S. J. Kim
DOI: 10.1063/1.2009835
关键词:
摘要: We report results of nanoscopic investigation grain crystallographic orientations and ferroelectric domains by electron backscatter diffraction (EBSD) technique piezoresponse force microscope (PFM), respectively, in (Bi1−xLax)4Ti3O12 (BLT) films for semiconductor memories. It is demonstrated that the EBSD useful characterizing nanoscale BLT films. Comparison studies switching properties PFM show c-axis parallel to normal oriented grains with almost linear dielectric have platelike morphology. However, a- or b-axis superior ellipsoidal morphology a size less than 0.2μm long axis. Consequently, suppression structures through process controls important realization high-density BLT-based
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