作者: J. L. Merz , Y. R. Yuan , G. A. Vawter
DOI: 10.1117/12.7973457
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摘要: This paper reviews recent progress in the development of integrated optical circuits involving GaAs/AfGaAs double heterostructure system. Devices utilizing periodic corrugations or gratings are considered briefly, whereas alternative attempts to fabricate by chemical etching discussed detail. The InGaAsP/InP system is also considered. Recent advances processing techniques for integration, including reactive ion etching, described, along with measurements that correlate waveguide loss epitaxial layer uniformity.