Surface Recombination Velocity Measurements of Metallized Surfaces by Photoluminescence Imaging
作者： Frode Kløw , Halvard Haug , Sean Erik Foss
DOI: 10.1016/J.EGYPRO.2013.11.084
关键词:
摘要: QSSPC-calibrated photoluminescence imaging (PLI) was used to determine the rear surface recombination velocity Srear,eff of p-type Si FZ wafers after processing large area screen printed Al contacts with varying paste thickness and firing temperatures. The varied by changing snap off in printer, resulting back field (BSF) investigated scanning electron microscopy. BSF thicknesses between 1.4 6.2 μm were found. saturated at high amounts combined temperatures while an increase eutectic layer observed. Several luminescence images taken each sample different reference samples assess stability technique, uncertainties are discussed.
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sci-hub.se 参考文章(19)
Bernhard Fischer, Loss analysis of crystalline silicon solar cells using photoconductance and quantum efficiency measurements Cuvillier. ,(2003)
Stefan Peters, Rapid Thermal Processing of Crystalline Silicon Materials and Solar Cells ,(2004)
Armin G. Aberle, Crystalline silicon solar cells : advanced surface passivation and analysis Centre for Photovoltaic Devices and Systems, University of New South Wales. ,(1999)
Sungeun Park, Soohyun Bae, Hyunho Kim, Seongtak Kim, Young Do Kim, Hyomin Park, Soomin Kim, Sung Ju Tark, Chang-Sik Son, Donghwan Kim, Effects of controllable process factors on Al rear surface bumps in Si solar cells Current Applied Physics. ,vol. 12, pp. 17- 22 ,(2012) , 10.1016/J.CAP.2011.04.021
Konstantinos Misiakos, Dimitris Tsamakis, Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K Journal of Applied Physics. ,vol. 74, pp. 3293- 3297 ,(1993) , 10.1063/1.354551
A.L. Udovsky, V.N. Karpushkin, E.A. Kozodaeva, General algorithm, its mathematical basis and computer autonomic program for calculation of phase diagrams of binary systems, containing p disordered phases of variable and q phases of constant compositions at (p,q) ≤ 10 Calphad. ,vol. 19, pp. 245- 277 ,(1995) , 10.1016/0364-5916(95)00025-A
Marc Rüdiger, Michael Rauer, Christian Schmiga, Martin Hermle, Effect of incomplete ionization for the description of highly aluminum-doped silicon Journal of Applied Physics. ,vol. 110, pp. 024508- ,(2011) , 10.1063/1.3603043
A MALDONADO, S TIRADOGUERRA, M MELENDEZLIRA, M DELALOLVERA, Physical properties of ZnO:F obtained from a fresh and aged solution of zinc acetate and zinc acetylacetonate Solar Energy Materials and Solar Cells. ,vol. 90, pp. 742- 752 ,(2006) , 10.1016/J.SOLMAT.2005.04.011
Jonas Krause, Robert Woehl, Michael Rauer, Christian Schmiga, Jürgen Wilde, Daniel Biro, Microstructural and electrical properties of different-sized aluminum-alloyed contacts and their layer system on silicon surfaces Solar Energy Materials and Solar Cells. ,vol. 95, pp. 2151- 2160 ,(2011) , 10.1016/J.SOLMAT.2011.03.017
T. Trupke, R. A. Bardos, M. C. Schubert, W. Warta, Photoluminescence imaging of silicon wafers Applied Physics Letters. ,vol. 89, pp. 044107- ,(2006) , 10.1063/1.2234747