Simulation of Electrical Characteristics of PERC Solar Cells
作者： Nour El Islam Boukortt , Baghdad Hadri , None
DOI: 10.1007/S11664-018-6456-6
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摘要: In recent years, silicon solar cells have reached efficiencies above 24%, which is ensuring rapid progress in the photovoltaic (PV) market. We review herein passivated emitter rear cell (PERC) technology and influence of contact resistance temperature dependence on output properties by using Silvaco computer-aided design (TCAD) tools. This numerical simulation indicates efficiency 24.82% for n-type monocrystalline PERC cell, with open-circuit voltage up to 761 mV. PV parameters, such as (Voc), short-circuit current (Jsc), maximum power (Pmax), fill factor, (η), are compared those other device architectures.
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