Precipitation in Ni-Si during electron and ion irradiation
作者： G.E. Lucas , T. Zama , S. Ishino
DOI: 10.1016/0022-3115(86)90096-6
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摘要: This study was undertaken to further investigate how the nature of irradiation condition affects precipitation in a dilute Ni-Si system. Transmission electron microscopy (TEM) discs solution annealed Ni alloy containing 5 at% Si were irradiated with 400 keV Ar+ ions, 200 He+ ions and 1 MeV electrons at average displacement rates range 2 × 10−5dpa/s 10−3dpa/s temperatures 25°C 450°C. Samples observed situ an HVEM, while ion specimens examined TEM after irradiation. Precipitation Ni3Si detected by appearance superlattice spots diffraction patterns. It found that as mass irradiating species increased, lower bound temperature which first increased. For irradiation, ∼125°C, whereas for similar rate boundary approximately 325°C. suggests cascade disordering competes radiation induced solute segregation.
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