Method for producing II-VI compound semiconductor epitaxial layers having low defects
作者： James Matthew Gaines , John Petruzzello
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摘要: Epitaxial layers of II-VI semiconductor compounds having low incidence lattice defects such as stacking faults are produced by first depositing a fraction monolayer the cation species compound, followed thin layer compound migration enhanced epitaxy (MEE). Growth remainder MBE results in much lower than if entire had been grown MBE. Layers useful devices LEDs and injection lasers.
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