Photoluminescence properties of ZnSe single crystalline films grown by atomic layer epitaxy
作者： Takafumi Yao , Toshihiko Takeda , Ryuji Watanuki
DOI: 10.1063/1.96834
关键词:
摘要: Atomic layer epitaxy has been employed to produce good‐quality ZnSe single crystalline films onto (100) oriented GaAs substrates. The epilayers grown at 280 °C exhibited smooth and featureless surface texture excellent photoluminescence characteristics. They showed dominant excitonic emission lines a very weak deep center band.
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