Methods of Forming Dual-Damascene Metal Wiring Patterns for Integrated Circuit Devices and Wiring Patterns Formed Thereby

摘要: Methods of forming dual-damascene metal wiring patterns include a first pattern (e.g., copper pattern) on an integrated circuit substrate and etch-stop layer the pattern. These steps are followed by electrically insulating inter-metal dielectric layer. The selectively etched in sequence to define opening therein that exposes portion This may trench via hole extending downward from bottom trench. A barrier is formed sidewall directly removed then for sufficient duration expose second order complete structure.