Effect of hydrogen on true leakage current characteristics of (Pb, La)(Zr, Ti)O 3 thin-film capacitors with Pt- or Ir-based top electrodes
作者： Soon-Gil Yoon , Dwi Wicaksana , Dong-Joo Kim , Seung-Hyun Kim , A. I. Kingon
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摘要: The degradation behavior of polarization and leakage current characteristics sol-gel-derived (Pb,La)(Zr,Ti)O3 (PLZT) thin films, with Pt, Ir, IrO2 top electrodes, by annealing under a 4% H2/96% N2 atmosphere were investigated. behaviors Pt/PLZT/Pt IrO2/PLZT/Pt capacitors annealed at 300 °C for 20 min in H2 well consistent the space-charge-influenced injection model proposed. However, recovered 700 10 Ar ambient after hydrogen anneal not proposed because conducting phase IrPb was formed between electrode PLZT during recovery modified Schottky barrier height. true forming are similar to those Ir/PLZT/Pt without hydrogen-forming gas anneal. P–E loops showed good through treatment. depended on (Ar or O2).
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