作者: Takeyasu Saito , Taiga Amano , Yoko Takada , Naoki Okamoto , Kazuo Kondo
DOI: 10.1109/ISAF.2015.7172712
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摘要: We fabricated ferroelectric (Pb,La)(Zr,Ti)O 3 (PLZT) capacitors by pulsed lase deposition (PLD) and investigated the effects of substrate temperature during PLD, Pb contents target, annealing period to improve properties. The R.T. with higher in target (1.27) subsequent at 750°C for 10 min exhibited best properties this work. With than lower 700°C, large hysteresis loops were not observed.