Method of making self-aligned halo process for reducing junction capacitance

摘要: A method for forming an LDD structure using a self-aligned halo process is described. gate silicon oxide layer provided over the surface of semiconductor substrate. electrode formed overlying layer. grown on sidewalls and nitride spacers are First ions implanted into substrate annealed whereby heavily doped source drain regions within not covered by spacers. An regions. Thereafter, removed. Second to form lightly in Third having opposite dosage deeper junction than insulating deposited opening through one conducting patterned completing fabrication integrated circuit device.