Method of making a field effect transistor with short channel length

摘要: For preventing a field effect transistor from driftage of the threshold voltage due to injection hot carriers, there is disclosed fabricated on semiconductor substrate and comprising thin dielectric film with two openings covering major surface having portion serving as gate insulating film, electrode formed covered an isolation first second lightly doped impurity regions in spacing relationship each other respective edge portions located below side electrode, respectively, walls projecting portions, directly contacting through openings, heavily partially overlapped regions, have leading ends walls, form LDD-structure, so that injected carriers are discharged by virtue direct contacts between regions.