Method for fabricating MOS transistors
作者： Chen-Chung Hsu
DOI:
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摘要: A method for fabricating a MOS transistor includes forming an oxide layer over silicon substrate of first conductivity type. gate electrode is formed the layer. Ions second type are implanted into to form lightly-doped source/drain regions. Impurity-containing spacers on sidewalls and electrode. The thermally processed drive impurities Finally, ions heavily-doped
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