作者: Ze'ev Wurman , Brian Cronquist , Deepak C. Sekar , Paul Lim , Israel Beinglass
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摘要: A method of manufacturing a semiconductor device, the including, providing first monocrystalline layer including regions, overlaying with an isolation layer, transferring second comprising regions to overlay wherein and are formed from substantially different crystal materials; subsequently etching as part forming at least one transistor in layer.