作者: A UMAR , M RAHMAN , Y HAHN
DOI: 10.1016/J.TALANTA.2008.09.020
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摘要: Abstract High-aspect-ratio ZnO nanowires based ultra-sensitive hydrazine amperometric sensor has been fabricated which showed a high and reproducible sensitivity of 12.76 μA cm−2 nM−1, detection limit, on S/N ratio, 84.7 nM, response time less than 5 s, linear range from 500 to 1200 nM correlation coefficient R = 0.9989. This is the first report in such very high-sensitivity low limit achieved for sensors by using nanostructures modified electrodes. Therefore, this work opens way utilize simply grown as an efficient electron mediator fabricate sensors.