Structure–property relationships of low sintering temperature scheelite-structured (1 − x)BiVO4–xLaNbO4 microwave dielectric ceramics

摘要: A series of (1 − x)BiVO4–xLaNbO4 (0.0 ≤ x 1.0) ceramics were prepared via a solid state reaction method. scheelite-structured solution was formed for 0.5 but > 0.5, tetragonal scheelite, monoclinic LaNbO4-type and La1/3NbO3 phases co-existed. As increased from 0 to 0.1, the room temperature crystal structure gradually changed associated with decrease in ferroelastic phase transition 255 °C (BiVO4) or even below. High sintering temperatures also found accelerate this compositions 0.08. Temperature independent high quality factor Qf >10000 GHz wide range 25–140 microwave permittivity er ∼76.3 ± obtained = 0.06 ceramic sintered at 800 °C. However, small changes composition resulted change sign magnitude coefficient resonant frequency (TCF) due proximity temperature. If TCF can be controlled tuned through zero, then is strong candidate device applications.