Very high sidemode-suppression-ratio distributed-Bragg-reflector lasers grown by chemical beam epitaxy
作者： F.S. Choa , W.T. Tsang , R.A. Logan , R.P. Gnall , U. Koren
DOI: 10.1049/EL:19920636
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摘要: The fabrication and performance of InGaAs/InGaAsP multiquantum well distributed-Bragg-reflector lasers grown by chemical beam epitaxy are reported. Use a long weak grating, which was made on thin uniformly quaternary layer, has enabled the grating coupling constant κ to be controlled. For most measured linewidths below 10 MHz. A record high sidemode suppression ratio 58.5 dB obtained.
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