Competitive emissions of InAs (QDs)/GaInAsP/InP grown by GSMBE
作者： Xiaowen Yuan , Qi Wang , Liaoxin Sun , Senlin Li , C. Q. Chen
DOI: 10.1007/S00339-014-8947-5
关键词:
摘要: In this letter, the optical properties of InAs (QDs)/GaInAsP on InP substrate grown by gas source molecular beam epitaxy are investigated. By measuring and analyzing photoluminescence spectra (QDs)/GaInAsP/InP at different temperatures excitation powers, origin each emission is verified. And it found that, with temperature increasing, intensity GaInAsP wetting layers decreases firstly (T < 150 K) then increases from 160 K to room temperature. experimental results three samples QDs’ sizes, a competitive between QDs confirmed.
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