Unusual carrier thermalization in a dilute GaAs1−xNx alloy
作者： P. H. Tan , Z. Y. Xu , X. D. Luo , W. K. Ge , Y. Zhang
DOI: 10.1063/1.2454552
关键词:
摘要: Photoluminescence (PL) properties of the E-0, E-0+Delta(0), and E+ bands in an x=0.62% GaAs1-xNx alloy were investigated detail, including their peak position, linewidth, line shape dependences on excitation energy, power, temperature, using micro-PL. The hot electrons within band are found to exhibit highly unusual thermalization, which results a large blueshift its PL energy by >2k(B)T, suggesting peculiar density states carrier dynamics band.
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