作者: Wei Li , Yiran Liang , Dangmin Yu , Lianmao Peng , Kurt P. Pernstich
DOI: 10.1063/1.4804643
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摘要: We report reduced contact resistance of single-layer graphene devices by using ultraviolet ozone (UVO) treatment to modify the metal/graphene interface. The were fabricated from mechanically transferred, chemical vapor deposition (CVD) grown, single layer graphene. UVO in regions as defined photolithography and prior metal was found reduce interface contamination originating incomplete removal poly(methyl methacrylate) (PMMA) photoresist. Our control experiment shows that exposure times up 10 minutes did not introduce significant disorder characterized Raman spectroscopy. By described approach, less than 200 {\Omega} {\mu}m achieved, while significantly altering electrical properties channel region devices.