Growth uniformity studies in molecular beam epitaxy
作者： Z.R. Wasilewski , G.C. Aers , A.J. SpringThorpe , C.J. Miner
DOI: 10.1016/0022-0248(91)90949-6
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摘要: Abstract We present the results of experimental measurements and numerical calculations layer uniformity MBE grown GaAs layers on stationary rotating wafers using different crucible geometries. obtain excellent agreement between theory experiment for actual geometry used in deposition describe configuration required to very good over a 3 inch wafer. also study case trumpet insert as simple way improving uniformity.
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