Optimization of buffer layers for InGaAs/AlGaAs PIN optical modulators grown on GaAs substrates by molecular beam epitaxy
作者： D. S. Katzer , W. S. Rabinovich , K. Ikossi-Anastasiou , G. C. Gilbreath
DOI: 10.1116/1.591481
关键词: Indium 、 Optical modulator 、 Molecular beam epitaxy 、 Buffer (optical fiber) 、 Gallium arsenide 、 Materials science 、 Quantum well 、 Layer (electronics) 、 Optoelectronics 、 Surface roughness
摘要: In this work we compare the effect of buffer layer on device quality and surface morphology strained InGaAs/AlGaAs PIN multiple quantum well (MQW) modulators. We examine GaAs layers linearly graded InGaAs layers. Our results indicate that for lower indium concentrations in wells (less than about 23%) better performance are obtained by growing directly GaAs. MQWs with mole fractions higher 24% have properties when a is used.
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