Fabrication and electric characterization of the n-ZnO/ p-nanocrystalline diamond film heterojunction
作者： J Huang , L J Wang , R Xu , K Tang , J M Lai
DOI: 10.1088/1742-6596/152/1/012017
关键词:
摘要: A heterojunction of n-ZnO / p-nanocrystalline diamond (NCD) film was fabricated, where the undoped p-type NCD and n-type ZnO were grown by microwave plasma chemical vapor deposition (MPCVD) method radio-frequency (RF) reactive magnetron sputtering method, respectively. The structure morphology analyzed Raman spectroscopy, X-ray diffraction (XRD) atomic force microscopy (AFM). carrier sheet densities measured Hall Effect 1.3?1012 cm-2 8.9?1014 cm-2, I-V characterization p-NCD indicated that this rectifying in nature with a turn-on voltage about 0.6V.
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