Fabrication of transparent p-n hetero-junction diodes by p-diamond film and n-ZnO film
作者： C.X. Wang , G.W. Yang , T.C. Zhang , H.W. Liu , Y.H. Han
DOI: 10.1016/S0925-9635(03)00237-1
关键词:
摘要: Abstract ZnO/diamond hetero-junction diodes have been fabricated for the first time. The structure of diode was n-type ZnO film/p-type diamond film on {111} surface a crystalline diamond. contact between n- and p-type semiconductors found to be improved. ratio forward current reverse exceeded 120 within range applied voltages −4 +4 V. possessed an optical transmission 50–70% in 500–700 nm wavelength regions.
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