作者: Wu Ernest Y , Li Baozhen , Kim Andrew Tae , Yang Chih-Chao
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摘要: A mandrel structure is provided over a dielectric using patterning process. The includes first mandrel, second and third in parallel arrangement. located between the mandrels has cut larger than minimum ground rule feature. sidewall layer formed structure. two long gaps for contact lines gap fuse element. orthogonal to connects gaps. removed. pattern used etch form trench comprising line trenches having width at least as great of process connecting, element less are filled with conductive material function an anode cathode e-Fuse.