Bias-enhanced nucleation of diamond on silicon dioxide
作者： M. D. Irwin , C. G. Pantano , P. Gluche , E. Kohn
DOI: 10.1063/1.119839
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摘要: Characterization of amorphous SiO2 surfaces after biasing pretreatments, which induce nucleation diamond, has been carried out using x-ray photoelectron spectroscopy and Raman spectroscopy. A mixture silicon carbide, oxycarbide, diamond are formed upon exposure biased to a CH4+H2 plasma used for deposition. It is concluded that on promoted by formation SiC surface layer. Textured films have fabricated bulk substrates pretreatments nucleation.
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