Proposal for an efficient source of polarized photoelectrons from semiconductors

作者: G. Lampel , C. Weisbuch

DOI: 10.1016/0038-1098(75)90884-4

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摘要: Abstract It is expected that a cesiated semiconductor such as GaAs excited with circularly polarized photons of energy close to the band gap would be very bright and intense source electrons. Under easily attainable experimental conditions it predicted one could obtain current 10−3–10−4 A an electronic polarization 50 per cent.

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