Strain relaxation and Sn segregation in GeSn epilayers under thermal treatment
作者： H. Li , Y. X. Cui , K. Y. Wu , W. K. Tseng , H. H. Cheng
DOI: 10.1063/1.4812490
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摘要: We report the effects of thermal annealing on characteristics GeSn epilayers grown Ge-buffered Si wafers with a high Sn content near threshold value that affords direct bandgap. On at temperatures below 400 °C, epilayer remain unchanged, compared to those as-grown samples. samples temperature in range 440–540 °C, strain relaxation is observed, accompanied by generation misfit dislocations GeSn/Ge interface. A further increase beyond 580 °C causes not only but also change microstructure epilayer. In addition, forms clusters and segregates surface, resulting reduction The present investigation shows changes film under treatment, providing an insight into physical properties such devices.
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