Strain mapping in MOSFETS by high-resolution electron microscopy and electron holography
作者： Florian Hüe , Martin Hytch , Florent Houdellier , Etienne Snoeck , Alain Claverie
DOI: 10.1016/J.MSEB.2008.10.020
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摘要: Abstract We present two methods for mapping strains in MOSFETs at the nanometer scale. Aberration-corrected high-resolution transmission electron microscopy (HRTEM) coupled with geometric phase analysis (GPA) provides sufficient signal-to-noise to accurately determine strain fields across active regions of devices. Finite element method (FEM) simulations are used confirm our measurements. The field view is however limited about 100 nm 2 . To overcome this, we have developed a new technique called dark-field holography based on off-axis and imaging. This us better resolution than HRTEM, spatial 4 nm 1 μm.
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