Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
作者： Kathryn Turner Schonenberg , Basanth Jagannathan , Louis D. Lanzerotti , David R. Greenberg , James Stuart Dunn
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摘要: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region a method of forming same are provided. The includes first conductivity type; base formed on portion said region; an type over region, wherein include carbon continuously therein. is further doped with boron.
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