Method of producing Si-Ge base heterojunction bipolar device

摘要: A method of producing a bipolar transistor includes the step forming an emitter contact layer containing high concentration impurity by means plasma doping or solid-state diffusion without causing in base layer. This makes it possible to realize thin having concentration. The invention also provides semiconductor device including and another element such as resistor polysilicon activated manner that both are disposed on same single substrate, steps of: surface substrate; then transistor. prevents from being affected heat treatment