METHOD OF CREATING HIGH-QUALITY RELAXED SiGe-ON-INSULATOR FOR STRAINED Si CMOS APPLICATIONS

摘要: A method of forming a thin, high-quality relaxed SiGe-on-insulator substrate material is provided which first includes SiGe or pure Ge layer on surface single crystal Si present atop barrier that resistant to the diffusion Ge. Optionally cap over layer, and thereafter heating various layers at temperature permits interdiffusion throughout optional thereby substantially relaxed, layer. Additional regrowth and/or formation strained epi-Si may follow above steps. materials as well structures including least are also disclosed herein.