Photoluminescence of silicon-vacancy defects in nanodiamonds of different chondrites
作者： I. I. Vlasov , A. A. Khomich , L. F. Semjonova , A. A. Shiryaev , A. V. Fisenko
DOI: 10.1111/MAPS.12450
关键词:
摘要: Photoluminescence spectra show that silicon impurity is present in lattice of some nanodiamond grains (ND) various chondrites as a silicon-vacancy (SiV) defect. The relative intensity the SiV band diamond-rich separates depends on chemical composition meteorites and size ND grains. strongest signal found for enriched small grains; thus, confirming our earlier conclusion defects preferentially reside smallest (≤2 nm) difference intensities luminescence individual are due to variable conditions thermal metamorphism their parent bodies and/or uneven sampling populations. Annealing air eliminates surface sp 2 -carbon; consequently, enhanced. Strong well-defined absorption defect promising feature locate cold (<250 °C) nanodiamonds space.
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