Low Temperature Photochemical Vapor Deposition of SiO2 Using 172 nm Xe2* Excimer Lamp Radiation with Three Oxidant Chemistries: O2, H2O/O2, and H2O2

摘要: In this work, low temperature Xe2* excimer lamp photochemical vapor deposition (photo-CVD) of SiO2 is performed using SiH4 with three oxidant systems:  O2, H2O/O2, and H2O2. While SiH4/O2 mixtures have been previously investigated, the H2O/O2- H2O2-based chemistries are new. At 100 °C, high rates can be achieved. FTIR spectra refractive index measurements suggest that as-deposited films excellent stoichiometry hydrogen content. Our results also used to develop a mechanistic framework for initial photodissociation reactions subsequent chain homogeneous important in overall chemistry. Increased gas-phase OH concentration which occurs H2O/O2 system accelerates rates, because mechanism operative when O2 available. Experimental conditions favor initiated by O(1D) instead O(3P) only small effects on observed rates.