Non-volatile random access memory cell with CMOS transistors having a common floating grid

摘要: The invention relates to a non-volatile static memory cell. cell comprises bistable flip-flop with four transistors, two complementary outputs. Between the outputs is placed storage element comprising transistors in series, namely p channel transistor and n transistor, said having common floating grid control grid. A charge injection zone provided on side of source region transistor. connected an output flip-flop, while other output. Repositioning takes place without any reversal original state flip-flop.